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Brochure (PDF) 5.1 MBTraining MaterialContributed by STMi Catania
Tuning parameters for accurate MOSFET simulation
1.6 MB
1.3 MB
Blaze workshop
4.4 MB
Simulating GaN Based Devices
1.1 MB
Laser Diode Simulation
3.7 MB
ATLAS
3.4 MB
Model Development using the C-Interpreter
600kb
Quantum Device Simulation
1.2 MB
Quantum Device Simulation
1.0 MB
896kb
Flat Panel Displays TCAD/Circuit Design
4.9 MB
TFT Simulation
2.8 MB
Amorphous and polysilicon devices
2.6 MB
1.6 MB
Modelling of organic thin film transistors for technology and circuit design
Organic Device Simulation Using Silvaco Software
September 2005
UOTFT: Universal Organic TFT Model for Circuit Design
7.9 MB
Integrated Simulation Solution for Advanced Power Devices
MixedMode
788kb
1.4 MB
Solar Cells
8.1 MB
ATLAS
Device Simulation Framework
ATLAS enables device technology engineers to simulate the electrical, optical, and thermal behavior of semiconductor devices. ATLAS provides a physics-based, easy to use, modular, and extensible platform to analyze DC, AC, and time domain responses for all semiconductor based technologies in 2 and 3 dimensions.
Key Features
- Accurately characterize physics-based devices in 2D or 3D for electrical, optical, and thermal performance without costly split-lot experiments
- Solve yield and process variation problems for optimal combination of speed, power, density, breakdown, leakage, luminosity, or reliability
- Fully integrated with ATHENA process simulation software, comprehensive visualization package, extensive database of examples, and simple device entry
- Choose from the largest selection of silicon, III-V, II-VI, IV-IV, or polymer/organic technologies including CMOS, bipolar, high voltage power device, VCSEL, TFT, optoelectronic, LASER, LED, CCD, sensor, fuse, NVM, ferro-electric, SOI, Fin-FET, HEMT, and HBT
- Connect TCAD to Tapeout with direct import of ATLAS results into UTMOST for SPICE parameter extraction
- Parallel processing supported on multi-core and multiple processor SMP machines
- Worldwide support
- Silvaco's strong encryption is available to protect valuable customer and third party intellectual property.
2D Device Simulation Modules
S-Pisces - 2D Silicon Device Simulator
MC Device – 2D Monte Carlo Device Simulator
Luminous – 2D Optoelectric Device Simulator
Organic Solar – Organic Solar Cell and Photodetector Simulator
MixedMode – Circuit Simulation for Advanced 2D Devices
VCSEL – Vertical Cavity Surface Emitting Laser Simulations
Quantum – 2D Simulation Models for Quantum Mechanical Effects
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Blaze – 2D Device Simulator for Advanced Materials
Giga – 2D Non-Isothermal Device Simulator
LED – 2D Light Emitting Diode Simulator
TFT – 2D Amorphous and Polycrystaline Device Simulator
Organic Display – OLED And OTFT Organic Display Simulator
Laser – Semiconductor Laser Diode Simulator
Ferro – Ferroelectric Field Dependent Permitivity Model
Noise – 2D Small Signal Noise Simulator
Magnetic – 2D Magnetic Device Simulator
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MC Device simulates the behavior of relaxed and strained silicon devices including non-equilibrium and ballistic effects in 2D. MC Device is part of the ATLAS Device Simulation Framework and is fully integrated with Interactive Tools.
Luminous is an advanced device simulator
specially designed to model light absorption and photogeneration in
non-planar semiconductor devices. Exact solutions for general optical
sources are obtained using geometric ray tracing. This feature enables
Luminous to account for arbitrary topologies, internal and external
reflections and refractions, polarization dependencies and dispersion.
Luminous also allows optical transfer matrix method analysis for coherence
effects in layered devices. The beam propagation method may be used
to simulate coherence effects and diffraction.
The Organic Solar module enables ATLAS to simulate the electrical and optical properties of organic solar cell devices, photodetectors and image sensors. Organic Solar is integrated into the ATLAS framework and allows the steady-state, transient and AC simulation of the electrical and optical behavior of photovoltaic organic devices. The exciton densities, diffusion, generation/recombination and dissociation characteristics can all be simulated.
MixedMode is a circuit simulator that includes
physically-based devices in addition to compact analytical models.
Physically-based devices are used when accurate compact models do not
exist, or when devices that play a critical role must be simulated
with very high accuracy. The physically-based devices may be simulated
using any combination of ATLAS 2D modules. The physically-based devices
are placed along side a circuit description that conforms to SPICE
netlist format. 
VCSEL is used in conjunction with the ATLAS
framework to produce physically based simulations of vertical cavity
surface emitting lasers (VCSELs). VCSEL joins sophisticated device
simulation to obtain electrical and thermal behavior with state of
the art models for optical behavior. 
Quantum provides a set of models for simulation
of various effects of quantum confinement and quantum transport of
carriers in semiconductor devices. A self consistent Schrodinger – Poisson
solver allows calculation of bound state energies and associated carrier
wave functions self consistently with electrostatic potential. Schrodinger
solvers can be combined with Non-equilibrium Green’s Function
(NEGF) Approach in order to model ballistic quantum transport in 2D
or cylindrical devices with strong transverse confinement. Quantum
also includes models for the quantum mechanical corrections to drift-diffusion
and hydrodynamic equations.
Blaze simulates devices fabricated using
advanced materials. It includes a library of binary, ternary and quaternary
semiconductors. Blaze has built-in models for graded and abrupt heterojunctions,
and simulates binary structures such as MESFETS, HEMT’s and HBT’s.
Giga combined with the S-Pisces or Blaze
device simulators allows simulation of self heating effects. Models
in Giga include heat generation, heat flow, lattice heating, heat sinks,
and effects of local temperature on physical constants. Thermal and
electrical physical effects are coupled through self-consistent calculations.
Giga is a fully integrated component of the ATLAS device simulation
framework.
LED is a module used for simulation and
analysis of light emitting diodes. LED is integrated in the ATLAS framework
with the BLAZE simulator and allows simulation of electrical, optical
and thermal behavior of light emitting diodes.
TFT is an advanced device technology simulator
equipped with the physical models and specialized numerical techniques
required to simulate amorphous or polysilicon devices including thin
film transistors. Specialized applications include the large area display
electronics such as Flat Panel Displays (FPDs) and solar cells.
The Organic Display module enables ATLAS to simulate the electrical and optical properties of organic display devices such as OTFTs and OLEDs. Organic Display is integrated into the ATLAS framework and allows the steady-state and transient simulation of the electrical and optical behavior of active organic devices including the singlet and triplet exciton densities, dopant exciton density and optical emission characteristics. 
Laser is the world’s first commercially
available simulator for semiconductor laser diodes. Laser works in
conjunction with Blaze in the ATLAS framework to provide numerical
solutions for the electrical behavior (DC and transient responses)
and optical behavior of edge emitting Fabry-Perot type lasers diodes. 
Ferro has been developed to combine the
charge-sheet model of FET with Maxwell’s first equation which
describes the properties of the ferroelectric film. The model can accurately
predict the static I-V behavior of these devices as well as the dynamic
response in transient and small signal modes.
Noise combined with S-Pisces or Blaze allows
analysis of the small-signal noise generated within semiconductor devices.
Noise provides accurate characterization of all small-signal noise
sources and extracts figures of merit which are essential for optimizating
circuit design. 
The Magnetic module enables the ATLAS device
simulator to incorporate the effects of an externally applied magnetic
field on the device behavior. The dynamics of the charge carrier motion
are modified by the addition of the Lorentz force. This force is proportional
to the vector product of the carrier velocity and the applied magnetic
flux density vector. The Magnetic module allows the consequent changes
to current flow and potential distributions to be calculated. 3D Device Simulation Modules
Device3D - 3D Device Simulator
Giga3D – 3D Non-Isothermal Device Simulator
TFT3D – 3D Amorphous and Polycrystaline Device Simulator
Magnetic3D – 3D Magnetic Device Simulator
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Thermal3D – Thermal Packageing Simulator
Luminous3D – 3D Optoelectric Device Simulator
MixedMode3D – Circuit Simulation for Advanced 3D Devices
Quantum3D – 3D Simulation Models for Quantum Mechanical Effects
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Device3D is a 3D device simulator for
silicon and other material based technologies. The DC, AC and time
domain characteristics of a wide variety of silicon, III-V, II-VI
and IV-IV devices can be analyzed. Device3D accurately characterizes
physics-based devices for electrical, optical, and thermal performance
without costly split-lot experiments. Device3D solves yield and process
variation problems for optimal combination of speed, power, density,
breakdown, leakage, luminosity and reliability.
The Giga3D module extends Device3D by
incorporating the effects of self-heating into a device simulation.
It includes models for heat sources, heat sinks, heat capacity and
thermal conduction. Physical and model parameters become dependent
on the local lattice temperature where appropriate, allowing the
self-consistent coupling between the semiconductor device equations
and the lattice temperature. 
TFT3D is an advanced device technology
simulator equipped with the physical models and specialized numerical
techniques required to simulate amorphous or polysilicon devices
in 3D. TFT3D models the electrical effects of the distribution of
defect states in the band gap of non-crystalline materials. Users
can specify the Density Of States (DOS) as a function of energy for
amorphous silicon and polysilicon for grain and grain boundaries
as well as the capture cross-sections/lifetimes for electrons and
holes. 
The Magnetic3D module enables the ATLAS
device simulator to incorporate the effects of an externally applied
magnetic field on the device behaviour. The dynamics of the charge
carrier motion is modified by the addition of the Lorentz force.
This force is proportional to the vector product of the carrier velocity
and the applied magnetic flux density vector. The Magnetic3D module
allows the consequent changes to current flow and potential distributions
to be calculated. 
Thermal3D is a general heatflow simulation
module that predicts heatflow from any power generating devices (not
limited to semiconductor devices), typically through a substrate
and into the package and/or heatsink via the bonding medium. Operating
temperatures for packaged and heat sinked devices or systems can
be predicted for the design and optimization phase or for general
system analysis. 
Luminous3D is an advanced simulator specially
designed for analysis of optical response of non-planar semiconductor
devices in three dimensions.
MixedMode3D is a circuit simulator that
includes physically-based 3D devices in addition to compact analytical
models. Physically-based devices are used when accurate compact models
do not exist, or when devices that play a critical role must be simulated
with very high accuracy. The physically-based devices may be simulated
using any combination of ATLAS 3D device modules. The physically-based
devices are placed along side a circuit description that conforms
to SPICE netlist format. 
Quantum3D provides a set of models for
simulation of various effects of quantum confinement and quantum
transport of carriers in semiconductor devices. A self consistent
Schrodinger – Poisson solver allows calculation of bound state
energies and associated carrier wave function self consistently with
electrostatic potential. Schrodinger solvers can be combined with
Non-equilibrium Green’s Function (NEGF) Approach in order to
model ballistic quantum transport in 3D devices with strong transverse
confinement.
FET Device Simulation Module
Mercury – Fast Simulation of FETs
Mercury is an ATLAS module optimized for
the fast simulation of FETs. Mercury is physics-based and so can
be used for the predictive simulation of devices. The short simulation
times allow Mercury to be used to analyse trends in the design of
FETs and to investigate manufacturing yields.
User Model Development Environment
C-Interpreter – USER-DEFINED C-LANGUAGE MODEL INTERFACE
The C-Interpreter allows convenient and
flexible definition of physical models and material parameters via
an ANSI standard C-language interface. The C-Interpreter uses sophisticated
compiler techniques to compile the user-defined functions at run-time,
while maintaining fast execution times. ATLAS supports a wide range
of C-Interpreter functions such as doping, composition fraction,
defect density of state, temperature and composition dependent band
parameters, as well as mobility, recombination and generation models.
Licensing Options
MixedModeXL – LARGE CIRCUIT SIMULATOR
MixedModeXL enables MixedMode and MixedMode3D
users to use an unlimited number of physical devices or compact model
elements in their circuits. This allows greater circuit definition
sophistication.
Rev. 101410_29