More About
ATHENA:

Brochure (PDF) 3.4 MB

Release Notes (Since Baseline)

Release Notes (2012 Baseline)

Manual

Product Roadmaps
90 Day | 1 Year | 3 Year

Software Download

Presentations

Advances in ion implantation modeling for doping of semiconductors

3.1 MB

Backend Process Simulation including Plasma Etch

1.4 MB

CMOS Latchup Simulation

1.1 MB

Elite 2D Topography

Advanced 2D deposition and etch simulator
2.2 MB

Fast Monte-Carlo Simulation of Ion Implantation

Binary collision approximation implementation within ATHENA
1.4 MB

LOCOS modeling

Modeling of Local Oxidation Processes
1.4 MB

MC Depo/Etch

2D Monte Carlo deposition and etch simulator
1.1 MB

MC Implant 1D/2D Monte Carlo Implantation Simulator

Seamlessly integrated into ATHENA's SSuprem4
2.2 MB

Modeling of implantation using analytical models

1.8 MB

Optimization of photolithography process using simulation

1.4 MB

Optolith 2D Lithography Simulator

Advanced 2D optical lithography simulator
2.8 MB

PLS Advanced Diffusion Model

New advanced diffusion model for dopants in Silicon
1.5 MB

Process Model Simulates Lithography, Plasma Etch

Sophisticated treatments for a surprising range of semiconductor processes
HTML

Process simulation calibration

1.1 MB

RTA simulation using <311> cluster models

1.4 MB

SSuprem4 Process Simulation Software

Advanced 2D Process Simulator
1.3 MB

ATHENA integrates several 2D process simulation modules within a user-friendly TCAD environment together with interactive tools (including TonyPlot, DeckBuild, DevEdit and MaskViews) and Virtual Wafer Fab (VWF). ATHENA has evolved from a world-renowned Stanford University simulator SUPREM-IV, with many advanced models and capabilities developed in collaboration with hundreds of academic and industry partners.

• ATHENA provides fast and accurate simulation of all critical fabrication steps used in modern semiconductor technologies including:
  • CMOS down to 22nm technology node
  • Multiple Gate FETs (MuGFETS): FinFET, FlexFET, Gate-All-Around (GAA) FETs, etc.
  • Power devices: BJT, JFET, IGBT, etc.
  • Optoelectronic devices
  • MEMS, and many others
• ATHENA accurately predicts multi-layer topology, doping distributions, and stress in various device structures
• ATHENA provides process simulation for variety of materials used in the semiconductor industry: Silicon, Silicon Germanium (SiGe), Silicon Carbides (SiC), Compound Semiconductors, e.g. GaAs, AlGaAs, InGaAs, InP, silicides, e.g. WSi. TiSi2, CoSi2.
• ATHENA includes advanced models for following process:
  • Ion implantation including fast Monte Carlo module
  • Doping diffusion including rapid thermal annealing (RTA)
  • Oxidation with stress effects
  • Physical etching and deposition, e.g. CVD, plasma etching, RIE, etc.
  • Optical lithography
  • Stress formation and strain/stress engineering
  • Advanced simulation environment allows:
  • Easy creation and modification of process flow input decks including automatic control of layout GDS2 mask sequences
  • Interactive visualization of 2D structures and distributions as well as 1D cross-sections
  • Run-time extraction of important process parameters
  • Optimization of process flow and calibration of process models

Sentaurus Process, T-SUPREMIV (SUPREM4) are the trademarks of their respective owners.