MC Device

2D Monte Carlo Device Simulator

MC Device simulates the behavior of relaxed and strained silicon devices including non-equilibrium and ballistic effects in 2D.
MC Device is part of the ATLAS Device Simulation Framework and is fully integrated with Interactive Tools.

Key Features

• Uses full electronic band structure
• Includes MC transport model for electrons and holes
• Models the scattering of carriers with acoustical and optical phonons, with other carriers, with impurities, and under impact ionization
• Treats charge transport under spatially-dependent stress
• Provides a quantum correction model based on Schroedinger’s equation
• Imports device structures from ATHENA and ATLAS
• Includes a bulk simulation mode for modeling charge transport in relaxed and strained silicon in arbitrary directions and under varying fields and stress levels
• Uses statistical enhancement methods to resolve the tail of the carrier distribution function and analyze hot-carrier effects

Rev. 021209_03