TFT3D

3D AMORPHOUS AND POLYCRYSTALLINE DEVICE SIMULATOR

TFT3D is an advanced device technology simulator equipped with the physical models and specialized numerical techniques required to simulate amorphous or polysilicon devices in 3D. TFT3D models the electrical effects of the distribution of defect states in the band gap of non-crystalline materials. Users can specify the Density Of States (DOS) as a function of energy for amorphous silicon and polysilicon for grain and grain boundaries as well as the capture cross-sections/lifetimes for electrons and holes. Models for mobility, impact ionization and band-to-band tunneling can be modified to accurately predict device performance.

Features

• Energy dependent DOS
• Trap-to-Band phonon-assisted tunneling
• Band-to-Band tunneling effects
• Poole-Frenkel barrier lowering
• DIGBL (Drain Induced Grain barrier Lowering)
• DC, AC and transient simulation
• Separate grain and grain boundary DOS specification

Rev. 020508_01