Volume 22, Number 1, January - February - March 2012

Simulation of Stresses and Mobility Enhancement Factors in 3D Inverter Cell

The analysis and characterization of stress effects have become an integral part of semiconductor technology and device design. In a typical semiconductor process flow the stresses are generated primarily due to volume expansion or contraction of the adjacent materials during temperature variations.

Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN Buffer

To break through the material limits of Silicon and to realize the drastic performance improvement needed to meet the severe requirements in the future, wide bandgap semiconductors such as SiC and GaN have attracted much attention. AlGaN/GaN HEMTs are generally promising candidates for switching power transistors due to their high breakdown strength and the high current density in the transistor channel giving a low on-state resistance.

ZnO based LED: A Performance Optimization through TCAD Simulation

In this paper, a two dimensional (2-D) generic model of quantum well light emitting diode (LED) based on ZnO, II-VI compound semiconductors has been reported. The structure has been designed and analyzed using ATLAS in conjuction with the BLAZE and LED modules of SILVACO software.

Geiger Mode Simulation of Avalanche Photodiodes in ATLAS

Single-photon counting detectors are used in a wide range of applications, including astronomy, optical communications, biological sensors, and military uses. Photomultiplier tubes (PMTs) have fulfilled these needs in the past.

The Studies of Anti-Reflective (AR) Coatings Effects for Solar Cell by Using Silvaco TCAD Tools

In 1975, screen printing was first applied to solar cells for the formation of the front and rear contacts replacing expensive vacuum metallization [1]. The encapsulate used in a photovoltaic (PV) module has many requirements. It must be optically transparent, electrically insulating, mechanically compliant, adherent to both glass and cells, and sufficiently robust to withstand 20–30 years in the field.

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